Electrical Properties, and Magnetoresistance, of Nanogranular SnO2 Films
V.K. Ksenevich a, T.A. Dovzhenko a, V.A. Dorosinets a, I.A. Bashmakov b, A.A. Melnikov c and A.D. Wieck c
a Department of Physics, Belarus State University, Nezalezhnasti av.4, 220030 Minsk, Belarus
b Department of Chemistry, Belarus State University, Leningradskayja str. 14, 220030 Minsk, Belarus
c Department of Physics and Astronomy, Bochum Ruhr-University, Universitaetstr., 150, 44780 Bochum, Germany
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Received: 26 08 2007;
Magnetotransport properties of the nanogranular SnO2 films were invesigated. Non-linear current-voltage (I-V) characteristics were observed at low temperatures. The temperature dependence of the resistance and non-ohmic I-V curves can be well approximated by fluctuation-induced tunnelling model, indicating importance of the contacts barriers between SnO2 grains. Magnetoresistance was measured within temperature range 2-15.3 K and could be consistent with the variable-range hopping conduction mechanism due to existence of localized states on the surface of SnO2 grains.
DOI: 10.12693/APhysPolA.113.1043
PACS numbers: 73.43.Qt, 73.50.Fq