SiOx Nanowires Produced on Molybdenum-Coated Si Substrates
H.W. Kim a, J.W. Lee a and J.-H. Yang b
a Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
b Advanced Materials R & D Center, Korea Institute of Industrial Technology, Republic of Korea
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Received: 26 08 2007;
We synthesized SiOx nanowires with diameters of 30-140 nm, for the first time by the simple heating of the Mo-coated Si substrates. X-ray diffraction, selected area electron diffraction, and energy-dispersive X-ray spectroscopy indicated that the nanowires were in an amorphous state, comprising Si and O only. Fitting the photoluminescence spectrum with Gaussian functions revealed that the nanowires exhibited significant photoluminescence intensities near blue and green light regions. We extensively discussed the possible growth mechanism of SiOx nanowires.
DOI: 10.12693/APhysPolA.113.1017
PACS numbers: 81.07.-b, 78.55.-m