Influence of Irradiation by High-Energy Protons on GaN Detectors

V. Kažukauskas a, V. Kalendra a, J.-V. Vaitkus a and R. Jasiulionis b a Semiconductor Physics Department, and Institute of Materials Science and Applied Research, Saulėtekio al. 9, bldg. 3, LT- 10222 Vilnius, Lithuania b Institute of Physics, Savanori 231, LT-02300 Vilnius, Lithuania

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Received: 26 08 2007;

We had investigated effects of the irradiation by 24 GeV protons with doses ranging from 1 × 1014 up to 1 × 1016 p/cm2 on the properties of GaN ionising radiation detectors. In the γ-spectra of the samples radiation of 7Be, 22Na, and other long-lived radionuclides with A < 70 was identified. Their activities were proportional to the irradiation dozes. Device contact properties were analysed by current-voltage I-V dependences. Created defects were revealed by the thermally stimulated defect spectroscopy. In the less irradiated samples the following values of the effective thermal activation energies were found: 0.12-0.16 eV, 0.18-0.22 eV, 0.35-0.42 eV, and 0.84-0.94 eV. Meanwhile, in the detectors irradiated with the highest doses only current growth with the activation energy of about 0.8-1.0 eV could be identified. Effects of percolation transport in disordered media were proved in the irradiated material.

DOI: 10.12693/APhysPolA.113.1013 PACS numbers: 72.20.Jv, 72.20.Fr, 72.80.Ey, 78.70.-g, 85.30.De