Growth and Investigation of p-La1/3Ca1/3 MnO3/n-Si Heterostructures
F. Anisimovas, R. Butkutė, J. Devenson, A. Maneikis, V. Stankevič, V. Pyragas and B. Vengalis
Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
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Received: 26 08 2007;
We report the fabrication and investigation of p-n diode structures based on thin hole-doped La1/3Ca1/3MnO3 films grown on n-type silicon substrates. La1/3Ca1/3MnO3 films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of La1/3Ca1/3MnO3 thin films on Si substrates. The surface roughness of La1/3Ca1/3MnO3 films investigated by atomic force microscopy was found to be in the range of 25 ÷ 30 nm. Studies of electrical properties showed that La1/3Ca1/3MnO3/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
DOI: 10.12693/APhysPolA.113.997
PACS numbers: 71.30.+h, 73.43.Qt, 75.47.Lx, 81.15.Fg