Charge Carrier Heating Effect in Porous Silicon Structures Investigated by Microwaves
J. Gradauskas a, b, E. Šatkovskis a, A. Česnys a, J. Stupakova a and A. Sužiedėlis a
a Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania
b Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania
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Received: 26 08 2007;
Diode-like samples, containing porous silicon structures, were investigated by microwave radiation pulses. The resistance of the samples and electromotive force arising over the samples placed in a section of waveguide was measured. Reduction of resistance of the samples was observed with increase in microwave power. More complicated shape of the electromotive force dependence on pulse power was found. It is shown that both effects could be explained by models based on a concept of carrier heating by microwave radiation.
DOI: 10.12693/APhysPolA.113.993
PACS numbers: 61.43.Gt, 78.70.Gq, 72.30.+q