Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures

J. Požela, K. Požela, A. Sužiedėlis, V. Jucienė and V. Petkun Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

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Received: 26 08 2007;

A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the Al0.2Ga0.8As/GaAs/Al0.2Ga0.8As high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E > g;10 kV/cm) exceeded the maximal drift velocity in bulk GaAs (vmax=107 cm/s) and achieved the value of 4 × 107 cm/s.

DOI: 10.12693/APhysPolA.113.989 PACS numbers: 72.10.Di, 73.21.Fg, 73.40.Kp