Energy Spectrum of InAs Quantum Dots in GaAs/AlAs Superlattices
R. Nedzinskas a, B. Čechavičius a, J. Kavaliauskas a, V. Karpus a, G. Krivaitė a, V. Tamošiūnas a, G. Valušis a, F. Schrey b, K. Unterrainer b and G. Strasser c
a Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania
b Institut fűr Photonik, Technische Universität-Wien, A-1040, Vienna, Austria
c Institut fűr Festkörperelektronik, Technische Universität-Wien, Floragasse 7, A-1040 Vienna, Austria
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Received: 26 08 2007;
Photo- and contactless electroreflectance spectroscopies were applied to study optical properties and electronic structure of GaAs/AlAs superlattice systems with embedded InAs quantum dots. The observed interband transitions related to the quantum dot ground and excited states, as well as optical transitions in the combined system formed by the InAs wetting layer and GaAs/AlAs superlattice are discussed.
DOI: 10.12693/APhysPolA.113.975
PACS numbers: 78.67.Hc