Radiative Recombination Spectra, of Heavily p-Type δ-Doped GaAs/AlAs MQWs
J. Kundrotas a, b, A. Čerškus a, G. Valušis a, M. Lachab c, S.P. Khanna c, P. Harrison c and E.H. Linfield c
a Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
b Gediminas' Technical University of Vilnius, Saulėtekio 11, LT-10223 Vilnius, Lithuania
c Institute of Microwave and Photonics, University of Leeds, Leeds LS2 9JT, United Kingdom
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Received: 26 08 2007;
We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3 × 1012 cm-2.
DOI: 10.12693/APhysPolA.113.963
PACS numbers: 78.55.-m, 78.67.De, 71.30.+h