Analysis of Conditions for Free-Carrier Grating Formation in InP n+nn+ Structures using Monte Carlo Technique
V. Gružinskis, P. Shiktorov and E. Starikov
Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania
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Received: 26 08 2007;
Electron transport in 5 μm long InP n+nn+ structure with the n-region doping of 1015 cm-3 is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure.
DOI: 10.12693/APhysPolA.113.943
PACS numbers: 72.20.Ht, 72.30.+q, 72.70.+m