Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells
D. Seliuta a, B. Čechavičius a, J. Kavaliauskas a, G. Krivaitė a, I. Grigelionis a, S. Balakauskas a, G. Valušis a, B. Sherliker b, M.P. Halsall b, M. Lachab c, S.P. Khanna c, P. Harrison c and E.H. Linfield c
a Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
b School of Electronic and Electrical Engineering, University of Manchester, Manchester, United Kingdom
c School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
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Received: 26 08 2007;
The authors demonstrate selective detection of terahertz radiation employing beryllium δ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
DOI: 10.12693/APhysPolA.113.909
PACS numbers: 78.66.-w, 85.30.De