Efficiency of GaAs-Based Pulsed Terahertz Emitters
A. Reklaitis
Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania
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Received: 26 08 2007;
Terahertz emission from the electron-hole plasma excited by a femtosecond optical pulse in GaAs-based emitters is studied by the Monte Carlo simulations. The THz energy radiated from the n- and p-doped GaAs surface THz emitters, from the contactless p -i -n emitter, and from the photoconductive emitter is evaluated. The obtained results show that the THz energy radiated by the photoconductive emitter exceeds the energy radiated by the surface and p -i -n THz emitters by more than one order of magnitude.
DOI: 10.12693/APhysPolA.113.903
PACS numbers: 42.72.Ai, 73.20.Mf, 78.20.Bh, 78.47.-p