Terahertz Generation from Femtosecond-Laser-Excited GaAs Surface Due to Electric-Field-Induced, Optical Rectification
V.L. Malevich a, P.A. Ziaziulia b and I.S. Manak b
a B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnasti Av. 68, 220072, Minsk, Belarus
b Belarussian State University, Nezalezhnasti Av. 4, 220050, Minsk, Belarus
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Received: 26 08 2007;
The dynamics of the depletion field screening induced by photoexcited carriers and THz generation caused by the electric-field-induced optical rectification are simulated for GaAs surface excited by femtosecond laser radiation on the basis of an ensemble Monte Carlo method. The results show that the photocarrier-induced screening occurs on a subpicosecond time scale and THz pulse essentially changes its wave form depending on excitation pulse duration and fluence. The possibility to use the depletion electric field induced THz generation for study of subpicosecond electric field screening dynamics is discussed.
DOI: 10.12693/APhysPolA.113.887
PACS numbers: 42.65.Re, 42.65.Ky, 73.30.+y