On Oscillating Carrier Dynamics in Highly Excited InP:Fe Crystals
L. Subačius a, A. Kadys b, K. Jarašiūnas b and P. Kamiński c
a Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
b Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-3, LT-10222, Vilnius, Lithuania
c Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
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Received: 26 08 2007;
The numerical analysis and experimental data on time-resolved four-wave mixing confirmed a novel origin of oscillations in subnanosecond carrier dynamics in highly excited InP:Fe crystals. The effect was attributed to simultaneous presence of electron and hole gratings, which drift in the space charge field and contribute constructively or destructively to refractive index modulation in time domain.
DOI: 10.12693/APhysPolA.113.855
PACS numbers: 71.55.Eq, 72.20.Jv