Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements

J. Mickevičius a, P. Vitta a, G. Tamulaitis a, A. Žukauskas a, M.S. Shur b, J. Zhang c, J. Yang c and R. Gaska c a Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222, Vilnius, Lithuania b Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, USA c Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA

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Received: 26 08 2007;

Carrier dynamics in high-quality GaN epilayer was investigated at two extreme excitation levels. Carrier lifetime under high excitation conditions was estimated by using light-induced transient grating technique. Measurements at extremely low excitation power density were performed by using frequency-domain fluorescence lifetime technique. The study was performed in a wide temperature range from 8 to 300 K. The results revealed the influence of donor-acceptor pair recombination and carrier trapping processes.

DOI: 10.12693/APhysPolA.113.833 PACS numbers: 72.20.Jv, 78.55.Cr