Investigation of Carrier Recombination, in Si Heavily Irradiated by Neutrons
E. Gaubas, A. Kadys, A. Uleckas and J. Vaitkus
Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania
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Received: 26 08 2007;
Variations of recombination lifetime, with fluence of the reactor neutrons from 1012 to 3 × 1016 n/cm2, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤ 80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.
DOI: 10.12693/APhysPolA.113.829
PACS numbers: 61.72.J-, 61.82.Fk, 72.40.+w