In Situ Conductance of Fe/Si and Fe/Ge Multilayers
P. Chomiuk a, M. Błaszyk a, T. Luciński a, M. Wróblewski b and B. Susła b
a Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland
b Institute of Physics, Faculty of Technical Physics, PoznańUniversity of Technology, Nieszawska 13a, 60-965 Poznań, Poland
Full Text PDF
Received: 7 05 2007;
In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe-Si and Fe-Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe-Si (or Fe-Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Ge) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.
DOI: 10.12693/APhysPolA.113.657
PACS numbers: 73.40.Sx;73.50.-h;75.70.Cn