Fabrication of High-Density, GaN Nanowires, through Ammoniating Ga2O3/Nb Films

H.-Z. Zhuang, B.-L. Li, S.-Y. Zhang, X.-K. Zhang, Ch.-S. Xue, D.-X. Wang and J.-B. Shen Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

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Received: 29 10 2007;

High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating Ga2O3/Nb films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.

DOI: 10.12693/APhysPolA.113.723 PACS numbers: 68.65.-k;81.05.Ea;81.15.Cd