Effect of Nano-SiC Doping on the Superconducting Critical Parameters in MgB2/Fe Wires and Tapes

D. Gajda a, A. Zaleski b, A. Morawski c and A. Kario c a International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 53-421 Wrocław, Poland b Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422 Wrocław, Poland c Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

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Received: 9 07 2007;

In this paper the results of critical current measurements for MgB2 wires and tapes in iron sheath with and without nano-SiC doping are presented. We focus on power-in-tube processing technique, using both in situ and ex situ methods. In situ MgB2 wires and tapes were fabricated from MgH2 and B or Mg and B powders. The methods such as hydrostatic extrusion and rolling were used. The samples were annealed under high Ar gas pressure (hot isostatic pressing) at 750 °C and 1.0 GPa for 40 min. It was found that critical current of MgB2/Fe superconducting wire or tape with nano-SiC dopant increased in higher magnetic field values in comparison to pure MgB2. A significant difference of Jc in tapes made by in situ way from MgH2 and Mg were found.

DOI: 10.12693/APhysPolA.113.371 PACS numbers: 74.70.Ad, 74.25.Sv