Spin Torque in Semiconductor Single Planar Tunnel Junctions |
| M. Wilczyński a J. Barnaś b, c R. Świrkowicz a
a Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland b Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland c Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland |
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| Received: 9 07 2007; |
| Transport in a single planar tunnel junction with electrodes made of a ferromagnetic semiconductor is analyzed theoretically in the zero- -temperature limit. Tunneling current and both (in-plane and out-of-plane) components of the spin torque exerted on one of the ferromagnetic electrodes are determined as a function of the angle θ between magnetic moments of the electrodes. The influence of the bias voltage and spin splitting of the electron band (in both electrodes) on the spin torque components is analyzed numerically. |
| DOI: 10.12693/APhysPolA.113.35 PACS numbers: 73.40.Gk, 73.40.Ty |