Stress Dependence of the Switching Field in Glass Coated Microwires

E. Komová Fac. of Aeronautics, TU, Rampova 7, 04121 Košice, Slovakia M. Varga, R. Varga, P. Vojtaník Inst. Phys., Fac. Sci., UPJS, Park Angelinum 9, 041 54 Košice, Slovakia J. Torrejon, M. Provencio and M. Vázquez ICMM CSIC, Cantoblaco, 280 49 Madrid, Spain

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Received: 9 07 2007;

Here we present the study of the stress dependence of the switching field in amorphous glass-coated magnetic microwire of composition FeNiMoB. Samples were heat treated in the temperature range from 250°C up to 500°C in order to obtain relaxed and nanocrystalline state. As-cast microwire shows strong stress dependence of the switching field, which decreases with the temperature of annealing. The sample is almost not stress dependent after heat treatment at 425°C, because the magnetostriction vanishes. However, the strongest stress dependence was found for the microwire annealed at 400°C, just below the optimal annealing temperature to obtain the nanocrystalline state.

DOI: 10.12693/APhysPolA.113.135 PACS numbers: 75.50.Kj, 75.60.Ej