Microstructural Analysis and Transport Properties of RuO2-Based Thick Film Resistors |
| S. Gabáni, K. Flachbart, V. Pavlík
Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 04001 Košice, Slovakia A. Pietriková Department of Technologies in Electronics, Faculty of Electrical Engineering and Informatics, TU Košice, 04200 Košice, Slovakia and M. Gabániová Research and Development, U.S. Steel Košice, s.r.o., 04454 Košice, Slovakia |
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| Received: 9 07 2007; |
| RuO2-based low temperature sensors appear as very good secondary thermometers, mainly in the temperature range below 4.2 K. This is due to their high temperature sensitivity and small magnetoresistance. Both properties are strongly influenced by the manufacturing process (mainly by firing temperature and firing time). In our contribution we show that the microstructure of sensors and the temperature dependence of their resistance R(T) down to 50 mK, in case when all sensors are prepared from the same paste, can be strongly influenced by change of the firing temperature from 800 °C to 900 °C. The paper also presents results on the X-ray microanalysis and the analysis of electrical conductivity of these sensors. |
| DOI: 10.12693/APhysPolA.113.625 PACS numbers: 85.40.Xx, 72.80.-r, 73.40.Rw |