Infrared Reflection of MnTe2 under High Pressure

Y. Mita, Y. Ishida, M. Kobayashi Graduate School of Engineering Science, Osaka University, Japan and S. Endo Research Center for Materials Science at Extreme Conditions, Osaka University, Japan

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Received: 9 07 2007;

The IR reflection measurements of MnTe2 were performed at room temperature under various pressures. It is observed that the reflectivity increases at the pressure range of 8-25 GPa and becomes almost constant at the higher pressure. The carrier concentrations obtained from the reflectivity spectra at the highest pressure region are the order of 1022 cm-3. Therefore it is concluded that pressure-induced semiconductor-metal transition occurs at the pressure range of 8-25 GPa.

DOI: 10.12693/APhysPolA.113.617 PACS numbers: 71.30.+h, 78.30.-j