Growth of β-Ga2O3 Nanorods and Photoluminescence Properties

S.Y. Zhang, H.Z. Zhuang, C.S. Xue, B. Li, J. Shen and D. Wang Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China

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Received: 24 08 2007;

β-Ga2O3 nanorods were successfully fabricated through annealing Ga2O3/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline Ga2O3 with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-Ga2O3 single crystal. The growth process of the β-Ga2O3 nanorods is probably dominated by conventional vapor-solid mechanism.

DOI: 10.12693/APhysPolA.112.1195 PACS numbers: 68.65.-k, 79.60.Jv, 81.15.Cd