Spin-Dependent Phenomena in Magnetoelectronic Devices |
| J. Barnaś a, b, M. Gmitra c, W. Rudziński a, M. Wawrzyniak a, V.K. Dugaev d and H. Kunert e
a Department of Physics, Adam Mickiewicz University Umultowska 85, 61-614 Poznań, Poland b Institute of Molecular Physics, Polish Academy of Sciences Smoluchowskiego 17, 60-179 Poznań, Poland c Department of Theoretical Physics and Astrophysics, P.J. Šafárik University Park Angelinum 9, 040 01 KoŠice, Slovak Republic d Department of Physics and Applied Physics, Rzeszów University of Technology Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland e Department of Physics, University of Pretoria 0002 Pretoria, Republic of South Africa |
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| Received: 4 07 2007; |
| Spin effects in electronic transport properties of artificial magnetic structures, like nanopillar spin valves, tunnel junctions, mesoscopic double-barrier junctions (single-electron transistors) are briefly discussed. Two classes of spin effects are distinguished; i.e. magnetoresistance phenomena due to magnetization rotation, and current-induced magnetic switching and magnetic dynamics. |
| DOI: 10.12693/APhysPolA.112.1259 PACS numbers: 75.60.Ch, 75.70.Cn, 75.70.Pa |