Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems
M. Maziarz a,b, B. Piechal b, A. Bercha b, R. Bohdan b, W. Trzeciakowski b and J.A. Majewski a
a Institute of Theoretical Physics, Faculty of Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
b Institute of High Pressure Physics Unipress, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
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Received: 9 06 2007;
In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be achieved by applying high pressure and low temperature. We report the experimentally measured dependence of the threshold current and emission energy on pressure and temperature in InGaAs/GaAs quantum-well lasers and provide the simple theoretical explanation of the physics behind the experimental findings.
DOI: 10.12693/APhysPolA.112.437
PACS numbers: 42.55.Px, 85.60.Jb