Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices |
| W. Wesela a,b, T. Wosiński a, A. Mąkosa a, T. Figielski a, J. Sadowski a,c,d, F. Terki d and S. Charar d
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland b College of Science, Cardinal S. Wyszyński University, Warsaw, Poland c MAX-Lab, Lund University, 22100 Lund, Sweden d Groupe d'Etude des Semiconducteurs CC074, Université Montpellier II, Montpellier, France |
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| Received: 9 06 2007; |
| The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices. |
| DOI: 10.12693/APhysPolA.112.369 PACS numbers: 73.50.Jt, 75.50.Pp, 75.30.Gw, 85.75.-d |