Photoluminescence Properties of ZnO and ZnCdO Nanowires
W. Zaleszczyk, K. Fronc, M. Aleszkiewicz, W. Paszkowicz, J. Wróbel, P. Dłużewski, S. Kret, M. Klepka, Ł Kłopotowski, G. Karczewski and T. Wojtowicz
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
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Received: 9 06 2007;
We report on the photoluminescence studies of ZnO and ZnCdO nanowires grown on SiO2/Si substrates by low-pressure vapor phase synthesis. X-ray diffraction and transmission electron microscopy measurements show that the crystallographic structure of these ZnO and ZnCdO nanowires is of wurtzite-type with a high crystal perfection. Surface morphology of samples was determined by scanning electron microscopy and atomic force microscopy. The photoluminescence spectra of as-grown nanowires, nanowires extracted from the substrate and deposited onto Si wafer, and nanowires dispersed in ethanol by sonication were investigated at room temperature and compared to each other. The temperature dependence of the near band-gap photoluminescence emitted by the as-grown nanowires was also measured and analyzed.
DOI: 10.12693/APhysPolA.112.357
PACS numbers: 78.55.Et, 78.67.Bf, 81.05.Dz, 81.07.Bc