Growth and Properties of ZnMnTe Nanowires

W. Zaleszczyk a, E. Janik a, A. Presz b, W. Szuszkiewicz a, J.F. Morhange c, P. Dłużewski a, S. Kret a, H. Kirmse d, W. Neumann d, E. Dynowska a, J.Z. Domagała a, W. Caliebe e, M. Aleszkiewicz a, W. Pacuski f, A. Golnik f, P. Kossacki f, L.T. Baczewski a, A. Petroutchik a, G. Karczewski a and T. Wojtowicz a a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland b Institute of High Pressure Physics, PAS, Sokołowska 29/37, 01-142 Warsaw, Poland c Institut des Nanosciences de Paris, CNRS, Université Paris VI et Paris VII, 140 rue de Lourmel, Paris 75015, France d Humboldt-Universität zu Berlin, Institut für Physik, AG Kristallographie, Newtonstr. 15, 12489 Berlin, Germany e Hasylab at DESY, Notkestr. 85, 22603 Hamburg, Germany f Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

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Received: 9 06 2007;

Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2 μm and that Mn2+ ions were incorporated into substitutional sites of the ZnTe crystal lattice.

DOI: 10.12693/APhysPolA.112.351 PACS numbers: 61.46.Df, 68.65.La, 78.55.Et, 78.67.Bf, 81.15.Hi