Changing the Properties of the CdTe/ZnTe Quantum Dots by in situ Annealing during the Growth
P. Wojnar a, G. Karczewski a, T. Wojtowicz a and J. Kossut a,b
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b ERATO Semiconductors Spintronics Project, al. Lotników 32/46, 02-668 Warsaw, Poland
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Received: 9 06 2007;
We present an attempt to control the properties of CdTe/ZnTe self-assembled quantum dots during their formation in the process of molecular beam epitaxy. Namely, the structures were in situ annealed at various temperatures and annealing times after the formation of quantum dots, before the deposition of a capping layer. Depending on the annealing parameters, the dots exhibit different optical properties which were studied by means of spatially resolved photoluminescence. From the analysis of these results, the information about relative changes of the average size and sheet density of quantum dots was extracted.
DOI: 10.12693/APhysPolA.112.283
PACS numbers: 78.67.De, 78.55.Et