Electron-Electron Interaction Effects in Quantum Hall Regime of GaN/AlGaN Heterostructures
M. Siekacz a, K. Dybko b, D. Maude c, M. Potemski c, W. Knap d, C. Skierbiszewski a
a High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
b Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
c Grenoble High Magnetic Field Laboratory, MPI-CNRS, 38042 Grenoble, France
d GES-UMR, CNRS-Université Montpellier 2, Place E. Bataillon, 34950 Montpellier, France
Full Text PDF
Received: 9 06 2007;
We measured the activation of resistivity at quantum Hall minima in high mobility two-dimensional electron gas confined at AlGaN/GaN interface. The effective g-factor and effective mass was deduced. The electron-electron interactions modify both quantities compared to their bare band values. It is found that the influence of interactions is much more pronounced onto g-factor than effective mass. The relative spin susceptibility was also calculated and compared with available theories. The best agreement was found with the ideal two-dimensional gas model in random phase approximation.
DOI: 10.12693/APhysPolA.112.269
PACS numbers: 71.30.+h, 73.40.-c, 73.43.Qt