Amplitude Modulation and Demodulation in Strain Dependent Diffusive Semiconductors |
| S. Ghosh and N. Yadav
School of Studies in Physics, Vikram University, Ujjain (M.P.), India |
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| Received: 29 05 2006; Revised version: 22 05 2007; |
| In communication processes, amplitude modulation is very helpful to save power by using a single band transmission. Thus in this paper authors have explored the possibility of amplitude modulation as well as demodulation of an electromagnetic wave in a transversely magnetized electrostrictive semiconductor. The inclusion of carrier diffusion and phenomenological damping coefficient in the nonlinear laser-semiconductor plasma interaction adds a new dimension to the analysis present in this paper. This problem is analyzed in different wave number regimes over a wide range of cyclotron frequencies. It is found that the complete absorption of the waves takes place in all the possible wavelength regimes when the cyclotron frequency (ωc) becomes exactly equal to (ν2+ω02)1/2 in absence of damping parameter. It has also been seen that diffusion of charge carriers modifies amplitude modulation and demodulation processes significantly. The damping parameter plays a very important role in deciding the parameter range and selecting the side band mode that will be modulated by the above-mentioned interaction. |
| DOI: 10.12693/APhysPolA.112.29 PACS numbers: 52.35.Mw, 72.50.+b, 66.30.-h |