Analysis of Thin Films by Time-of-Flight Low Energy Ion Scattering

S. Průša, M. Kolíbal, P. Bábor, J. Mach and T. Šikola Institute of Physical Engineering, Brno University of Technology, Technicka 2896/2, 616 69 Brno, Czech Republic

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Received: 01 09 2006; Revised version: 05 03 2007; In final form: 10 04 2007;

In the paper the design and application of a time-of-flight low energy ion scattering instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of time-of-flight low energy ion scattering to analyse near-to-surface layers of thin films prepared both ex situ and in situ. It is shown that the broadening of peaks in time-of-flight low energy ion scattering spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.

DOI: 10.12693/APhysPolA.111.335 PACS numbers: 68.49.Sf, 81.05.Cy, 68.55.-a, 81.15.Ef