Synthesis and Electrical Properties of La-Pr-Mn-O Thin Films and Heterostructures

R. Butkutė, F. Anisimovas, A.K. Oginskis, A. Steikūnienė, J. Devenson and B. Vengalis Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

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Received: 04 09 2006;

In this paper we report the results of synthesis and study of both ceramic samples and thin films of electronically doped La0.7Pr0.3MnO3 and related heterostructures composed of La0.7Pr0.3MnO3 and p-type La0.67Ca0.33MnO3. The ceramic La0.7Pr0.3MnO3 samples were prepared by a conventional solid state reaction technique. Single phase La0.7Pr0.3MnO3 thin films and La0.7Pr0.3MnO3/La0.67 Ca0.33MnO3 heterostructures were grown on lattice-matched perovskite NdGaO3 substrates by pulsed laser deposition. Electron doping was indicated both for ceramic La0.7Pr0.3MnO3 samples and thin films from thermopower data. Both ceramic samples and thin films of La0.7Pr0.3MnO3 demonstrated resistivity of about 10 mΩ cm at 300 K and semiconductor-like resistance vs. temperature behavior with cooling down to 78 K. Meanwhile, the resistance of the La0.7Pr0.3MnO3/La0.67Ca0.33MnO3 interface showed an anomalous peak at 185 K. A series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on both electrical and magnetic properties of La0.7Pr0.3MnO3 material and the heterostructures.

DOI: 10.12693/APhysPolA.111.111 PACS numbers: 75.70.-i, 71.30.+h, 73.50.-h, 75.70.Pa