Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection
A. Koziča, Č. Paškeviča, A. Sužiedėlisa, J. Gradauskasa, S. Ašmontasa, A. Szerlingb and H. Wrzesińskab
a Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
b Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw, Poland
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Received: 02 10 2006;
In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.
DOI: 10.12693/APhysPolA.110.845
PACS numbers: 85.30.De, 72.30.+q