Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation |
| J. Stupakovaa, S. Ašmontasb, J. Gradauskasb,a, V. Zagadskija, E. Shatkovskisa,b and A. Sužiedėlisb,a
a Vilnius Gediminas Technical University, Saulėtekio 11, 10223, Vilnius, Lithuania b Semiconductor Physics Institute, Gostauto 11, 01108, Vilnius, Lithuania |
| Full Text PDF |
| Received: 10 07 2006; |
| Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed. |
| DOI: 10.12693/APhysPolA.110.817 PACS numbers: 72.30.+q, 78.55.Mb, 85.30.De |