Excitonic Giant Zeeman Effect in Wide Gap Diluted Magnetic Semiconductors Based on ZnO and GaN | W. Pacuskia, b, D. Ferrandb, P. Kossackia, b, S. Marcetb, J. Cibertc, J.A. Gaja and A. Golnika
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681, Warszawa, Poland bCNRS-CEA-UJF group "Nanophysique et Semiconducteurs", BP 87, 38402, St Martin d'Hères Cedex, France cLaboratoire Louis Néel, CNRS, BP 166, 38042 Grenoble Cedex 9, Grenoble, France |
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| Received: 17 06 2006; |
| We present a theoretical description of the excitonic giant Zeeman effect observed in wide gap diluted magnetic semiconductors (Zn,Co)O and (Ga,Mn)N. In these materials, A and B excitons present quite complex energy shifts and change of oscillator strengths under magnetic field. These features can be well reproduced using an excitonic Hamiltonian, taking into account ion-carrier exchange, wurtzite trigonal crystal field, spin-orbit and electron-hole exchange interactions. |
| DOI: 10.12693/APhysPolA.110.303 PACS numbers: 75.50.Pp, 75.30.Hx, 78.20.Ls, 71.35.Ji |