Magneto-Luminescence Study of Silicon-Vacancy in 6H–SiC

A. Wysmołeka, K. Wardaka, R. Stępniewskia, J. Baranowskia, M. Potemskib, E. Tymickic and K. Graszac, d aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland bGrenoble High Magnetic Field Laboratory, CNRS, BP 166X, 38042 Grenoble, France cInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland dInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46 02-668 Warsaw, Poland

Full Text PDF

Received: 17 06 2006;

The magneto-spectroscopy studies of luminescence related to silicon-vacancy, in high quality 6H-SiC crystals grown by the seeded physical vapor transport method, are presented. The superior optical quality of these crystals allowed us to resolve a doublet structure of the 1.398 eV emission line (V2 line), commonly assigned to the transitions involving two singlet states of the silicon-vacancy. Experiments performed in magnetic fields up to 20 T showed that each doublet constituent of the V2 line splits into four components for the magnetic field parallel to the c-axis of the 6H-SiC crystals. This result could be hardly explained in terms of a singlet to singlet transition. The analysis of the angle-resolved luminescence experiments in high magnetic fields serves us to discuss the symmetry of the defect states responsible for the V2-line in silicon carbide.

DOI: 10.12693/APhysPolA.110.437 PACS numbers: 78.55.Hx, 71.55.-i, 71.55.Ht