Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy

M. Skrobota, M. Godlewskia, b, E. Guziewiczb, K. Kopalkob and M.R. Phillipsc aDept. of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland, bInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland cMicrostructural Analysis Unit, UTS, Sydney, Australia

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Received: 17 06 2006;

Monocrystalline films of sphalerite-type ZnSe were grown on GaAs(100) substrates from elemental Zn and Se precursors by atomic layer epitaxy in a gas flow system. Due to color mixing of band edge and deep defect-related emissions these layers emit intensive white light. Depth profiling cathodoluminescence indicates that green and red emissions mostly come from disordered regions of the films, close to the ZnSe/GaAs interface. We tested a possibility of tuning of chromaticity coordinates and of color temperature of the emission. We found that the chromaticity parameters (color perception) can be tuned by either regulating the appropriate accelerating voltage of electrons or current density of primary electrons in cathodoluminescence investigations. These properties of ZnSe films make them suitable for some practical applications as white light sources.

DOI: 10.12693/APhysPolA.110.359 PACS numbers: 42.79.-e, 78.66.-w, 81.05.-t