Theoretical Study of Spin Lifetimes in [110] Strained GaAs
A. Skierkowski and J.A. Majewski
Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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Received: 17 06 2006;
We present first-principles studies of the zero field spin splitting of conduction band in [110] strained GaAs that determine spin lifetimes in semiconductors. Our calculations reveal strong anisotropy of the linear-k spin splitting in the (110) plane of the Brillouin zone and very minor in the (001) plane. This provides a qualitative understanding of the difference in the spin lifetimes in the GaAs/AlAs heterostructures grown along [100] and [110] crystallographic directions.
DOI: 10.12693/APhysPolA.110.353
PACS numbers: 71.55.Eq, 71.70.Fk, 71.70.Ej, 72.25.Rb