Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
G. Cywińskia, C. Skierbiszewskia, b, A. Feduniewicz-ŻZmudab, M. Siekacza, L. Nevouc, L. Doyennettec, F.H. Julienc, P. Prystawkoa, M. Kryśkoa, S. Grzankaa, I. Grzegorya and S. Porowskia
aInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
bAction OptoGaN, Institut d'Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, 91405 Orsay Cedex, France
cTopGaN Ltd., 01-142 Warsaw, Poland
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Received: 17 06 2006;
Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
DOI: 10.12693/APhysPolA.110.175
PACS numbers: 68.65.Fg, 78.66.-w, 78.67.De, 78.40.Fy, 81.15.Hi