Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment
M. Baja, M. Gryglasa, B. Jouaultb, D. Maudec, G. Fainid, U. Gennserd and A. Cavannad
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
bGroupe d'Etude des Semiconducteurs, Université Montpellier II, CNRS, 34095 Montpellier, France
cGrenoble High Magnetic Field Laboratory, CNRS, 25 Avenue des Martyrs, 38042 Grenoble, France
dGroupe de Physique et Technologie des Nanostructures LPN - CNRS, 91460 Marcoussis, France
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Received: 17 06 2006;
Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to Xxy and Xz valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why Xxy states can be seen without any phonon participation.
DOI: 10.12693/APhysPolA.110.157
PACS numbers: 73.63.-b, 73.40.Gk, 73.20.Hb, 72.10.Di, 72.10.Fk