Carrier Density Control by Illumination in Surface Doped, p-Type (Cd,Mn)Te Quantum Wells

W. Maślanaa, b, P. Kossackia, b, J.A. Gaja, D. Ferrandb, M. Bertolinib, S. Tatarenkob, J. Cibertc, M. Kutrowskid and T. Wojtowiczd aInstitute of Experimental Physics, Warsaw University,Hożza 69, 00-681 Warsaw, Poland bLaboratoire de Spectrométrie Physique, CNRS et Université Joseph Fourier - Grenoble, B.P. 87, 38402 Saint Martin d'Héres Cedex, France cLaboratoire Louis Néel, CNRS, B.P. 166, 38042 Grenoble Cedex, France dInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Received: 17 06 2006;

We report both decrease and increase in the 2D carrier gas density in a simple (Cd,Mn)Te/(Cd,Mg)Te heterostructure with (Cd,Mn)Te quantum well. The two effects were achieved by light with different photon energies. The quantum wells were 10 nm wide with 2D hole gas supplied by surface states. For the sample with 25 nm cap layer thickness, it was possible to tune the hole gas concentration from almost empty well (hole density below 1×1010 cm-2) to 45×1010 cm-2. The illumination with 425 nm wavelength almost doubled the hole gas density from the initial 24×1010 cm-2. The depletion mechanism was most effective for illumination with the orange (575 nm) light.

DOI: 10.12693/APhysPolA.110.255 PACS numbers: 75.50.Pp, 78.67.De, 61.72.Vv