Photoluminescence and Electron Paramagnetic Resonance Studies of Bulk GaN Doped with Gadolinium
Z. Lipińskaa, M. Pawłowskib, H. Żołnierowicza, A. Wysmołeka, M. Palczewskab, M. Kamińskaa, A. Twardowskia, M. Boćkowskic and I. Grzegoryc
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
cInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
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Received: 17 06 2006;
Photoluminescence and electron paramagnetic resonance experiments on strain free GaN bulk crystals of wurtzite structure doped with gadolinium are reported. Efficient gettering of residual GaN donors by Gd was observed. Electron paramagnetic resonance showed that Gd ion incorporated into GaN lattice had Gd3+(4f7) configuration. The observed photoluminescence spectra were explained as due to intracenter Gd3+(4f7) transitions. No ferromagnetic behavior was detected.
DOI: 10.12693/APhysPolA.110.243
PACS numbers: 78.55.Cr, 71.55.-i, 71.35.-y