Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System
K.P. Koronaa, A. Babińskia, S. Raymondband Z. Wasilewskib
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
bInstitute for Microstructural Sciences, NRC Canada, Ottawa, Canada
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Received: 17 06 2006;
We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
DOI: 10.12693/APhysPolA.110.219
PACS numbers: 78.47.+p, 72.20.Jv, 78.67.Hc, 78.55.Cr