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Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays |
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A.J. Janavičiusa, R. Purlysb and Ž. Norgėlaa
aŠiauliai University, P. Višinskio 25, 76351Šiauliai, Lithuania |
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| Received: 13 04 2005; revised version: 20 09 2005; |
| We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected. |
| DOI: 10.12693/APhysPolA.109.159 PACS numbers: 61.72.-y, 61.72.Dd, 05.50.+q |