Low-Temperature Raman Scattering in TlGaxIn1-xS2 Layered Mixed Crystals: Compositional Dependence of the Mode Frequencies and Line Shapes
N. M. Gasanly and N. S. Yuksek
Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
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Received: 23 06 2005;
The Raman spectra of TlGaxIn1-xS2 layered mixed crystals were studied for a wide range of composition (0 ≤ x ≤ 1) at T=50 K. The effect of crystal disorder on the line width broadening of the Raman-active modes are discussed. The asymmetry in the Raman line shape is analyzed for two interlayer and intralayer modes exhibiting one-mode behavior.
DOI: 10.12693/APhysPolA.108.997
PACS numbers: 78.20.-e, 78.30.Hv, 78.30.-j