Effect of Heat Treatment on the ac Conductivity and Dielectric Properties of Ag33Sb31Se36 Thin Films |
| E. Abd El-Wahabb
Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt |
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| Received: 11 06 2004; revised version: 21 02 2005; in final form: 21 06 2005; |
| The effect of heat treatment on the ac conductivity and dielectric properties of the melt quenched and thermally evaporated Ag33Sb31Se36 chalcogenide system are reported for the first time. The results of the alternating current conductivityσac, the dielectric constantε1, and the dielectric lossε2 of the Ag33Sb31Se36 thin film samples are presented over the temperature range 303-373 K and the frequency range 0.1-100 kHz. The temperature dependence of the ac conductivityσac(ω) and the frequency exponent s are discussed with the aim of the correlated barrier hopping model. Values of σac(ω),ε1, and ε2 were found to increase with the increase in the annealing temperature due to the reduction of the number of unsaturated defects which decrease the density of localized states in the band structure. |
| DOI: 10.12693/APhysPolA.108.985 PACS numbers: 73.61.-r, 77.55.+f, 81.40.Rs, 81.40.Tv, 81.40.Ef |