Carriers Diffusion in GaAs/AlAs Type II Quantum Well |
| A. Lesiaka, B. Chwalisza,b, A. Wysmołeka, M. Potemskib, R. Stępniewski a and V. Thierry-Miegc
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland bGrenoble High Magnetic Field Laboratory, CNRS, Grenoble, France cLaboratoire de Photonique et de Nanostructures, CNRS, Marcoussis, France |
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| Received: 4 06 2005; |
| The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers. |
| DOI: 10.12693/APhysPolA.108.755 PACS numbers:78.55.Cr, 78.66.Fd, 78.67.Hc, 75.75.+a |