Temporal Evolution of Multi-Carrier Complexes in Single GaN/AlGaN Quantum Dots
K. Surowiecka, A. Wysmołek, R. Stępniewski, R. Bożek, K. Pakuła and J.M. Baranowski
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
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Received: 4 06 2005;
Microphotoluminescence of low-density GaN/AlxGa1-xN quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed.
DOI: 10.12693/APhysPolA.108.879
PACS numbers:78.55.Cr, 78.67.Hc