Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering |
| B. Pődör
Budapest Tech, Kandó Kálmán Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Taraszmező u. 17, 1084 Budapest, Hungary and Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science P.O.B. 49, 1525 Budapest, Hungary |
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| Received: 4 06 2005; |
| Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a ∼ T-1/2 like temperature dependence dominated the hole mobility in the investigated temperature range. |
| DOI: 10.12693/APhysPolA.108.837 PACS numbers:72.20.Fr, 72.20.Dp, 72.80.Ey |